Understanding graphene-semiconductor Schottky contacts, Semiconductor Today, 4 January 2017

Researchers in Singapore, the USA and Italy have been developing a modified model of Schottky contacts between graphene (Gr) and two-dimensional (2D) and three-dimensional (3D) semiconductors [Shi-Jun Liang et al, International Electron Devices Meeting, session 14.4, 2016]. The team from Singapore University of Technology and Design, Lawrence Berkeley National Laboratory in the USA, University of Salerno and CNR-SPIN Salerno in Italy, and the National University of Singapore and Yale-NUS College in Singapore performed both theoretical and experimental work to validate the model.

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