Shaffique Adam
Science (Physics)
Associate Professor
Head of Studies, Physical Sciences
National Research Foundation Fellow
Contact No.: +65 6601-3175
Email: shaffique.adam@yale-nus.edu.sg
Website: www.physics.nus.edu.sg/staff/adam.html
Website: http://sites.google.com/site/shaffiqueadam/home
Associate Professor Shaffique Adam was born in Nairobi, Kenya. After completing his A-levels in Kenya, he went to Stanford University where he received his BS, majoring in Physics with a minor in Mathematics. He graduated with departmental honours and a University distinction. After spending four months as an exchange student at Magdalen College in Oxford University, Assoc Prof Adam went on to pursue his doctorate in Theoretical Physics at Cornell University, where he worked on the magnetic properties of nanoscale conductors. He then moved to the Condensed Matter Theory Center at the University of Maryland where he worked on the electronic transport properties of graphene. Before joining Yale-NUS College, Assoc Prof Adam spent three years as a National Research Council Fellow in the Center for Nanoscale Science and Technology at the US National Institute of Standards and Technology.
As a theoretical physicist, Assoc Prof Adam is interested in the complex and surprising ways electrons behave when they are subject to the interplay of quantum mechanics, material imperfections, confined geometries and interactions with other electrons. Assoc Prof Adam was awarded a Singapore National Research Foundation Fellowship which includes a five-year research grant to support research on the effects of electron interactions in new materials like graphene and topological insulators.
Assoc Prof Adam has published over 30 manuscripts in prominent journals including Nature, Nature Physics, the Proceedings of the National Academies of Sciences and Physical Review Letters. He has an h-index of 20 and has 5 publications each with more than 500 citations. Some recent work includes:
1. “Disorder induced magnetoresistance in a two dimensional electron system”
J. Ping, I. Yudhistira, N. Ramakrishnan, S. Cho, S. Adam, and M. S. Fuhrer
Phys. Rev. Lett. 113, 047206 (2014) [Editors’ Suggestion]
http://dx.doi.org/10.1103/PhysRevLett.113.047206
2. “Origin of band gaps in graphene on hexagonal boron nitride”
J. Jung, A. DaSilva, A. H. MacDonald, and S. Adam
Submitted: http://arxiv.org/abs/1403.0496
3. “Non-divergent Fermi velocity for interacting graphene at the Dirac point”
M. Milletarì and S. Adam
Submitted: http://arxiv.org/abs/1406.6113
Integrated Science 1: The Science of Water
Integrated Science 2/3: Physics Track: Electronics and Electrodynamics